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(R)
VN220 / VN220(011Y) / VN220(012Y)
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE VN220 VN220(011Y) VN220(012Y) VDSS 60V RDS(on) 0.05 IOUT 28A
OUTPUT CURRENT (CONTINUOUS): 28A AT TC=25C s THERMAL SHUT-DOWN s UNDERVOLTAGE SHUT-DOWN s OPEN DRAIN DIAGNOSTIC OUTPUT s VERY LOW STAND-BY POWER DISSIPATION
s
PENTAWATT (vertical)
PENTAWATT (horizontal)
PENTAWATT (in-line)
DESCRIPTION The VN220 is a monolithic device designed in STMicroelectronics VIPowerTM technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from overtemperature and short circuit. The open drain diagnostic output indicates open circuit (no load) and overtemperature status. BLOCK DIAGRAM
ORDER CODES: PENTAWATT vertical PENTAWATT horizontal PENTAWATT in-line VN220 VN220(011Y) VN220(012Y)
September 1999
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ABSOLUTE MAXIMUM RATING
Symbol V(BR)DSS VDS(off) VDS IOUT IR IIN V IN VSTAT -VCC ISTAT VESD Ptot Tj Tstg Parameter Drain-Source Breakdown Voltage Drain-Source Voltage (OFF STATE) Drain-Source Voltage (Output Shorted to Ground) Output Current (cont.) Reverse Output Current Input Current Input Voltage Status Output Voltage Reverse Supply Voltage Status Current Electrostatic Discharge (1.5K; 100pF) Power Dissipation at Tc 25C Junction Operating Temperature Storage temperature Value 60 60 30 28 -28 +/-10 35 35 -4 +/-10 2000 60 -40 to 150 -55 to 150 Unit V V V A A mA V V V mA V W C C
CONNECTION DIAGRAM (TOP VIEW)
5 4 3 2 1
OUTPUT STATUS VCC INPUT GROUND
CURRENT AND VOLTAGE CONVENTIONS
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THERMAL DATA
Symbol R thj-case R thj-amb Parameter Thermal resistance junction-case Thermal resistance junction-ambient (MAX) (MAX) Value 2.08 60 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (VCC=13V; -40C T j 125C unless otherwise specified) POWER
Symbol VCC R on Parameter Supply Voltage On State Resistance IOUT=3.5A IOUT=100mA; Tj=25C Off state On State; T j=25C On State; T j=100C SWITCHING Symbol td(on) tr td(off) tf Parameter Turn-on Delay Time of Output Current Rise Time of Output Current Turn-off Delay Time of Output Current Fall Time of Output Current Test Condit ions IOUT=3.5A; Resistive Load; Input Rise Time<0.1s; Tj=25C IOUT=3.5A; Resistive Load; Input Rise Time<0.1s; Tj=25C IOUT=3.5A; Resistive Load; Input Rise Time<0.1s; Tj=25C IOUT=3.5A; Resistive Load; Input Rise Time<0.1s; Tj=25C Min Typ 20 200 30 5 Max Unit s s s s Test Condit ions Min 12 Typ Max 30 0.05 1.33 1 8 6 Unit V mA mA mA
IS
Supply Current
LOGIC INPUT Symbol V IL VIH VI(hyst) IIN VICL Input Input Input Input Input Parameter Low Level Voltage High Level Voltage Hysteresis Voltage Current Clamp Voltage Test Condit ions Min 6 1 V IN=10V IIN=1mA 600 31 36 Typ Max 1.5 (*) Unit V V V A V
PROTECTIONS AND DIAGNOSTIC Symbol V STAT ISTAT IOL tol T TSD TR V STATCL (*) Parameter Test Condit ions Status Output Voltage ISTAT=5mA (Fault Condition) Status Output Leakage V STAT=30V Current Open Load Current Level Open Load Filtering Time Thermal Shut-down Temperature Reset Temperature Diagnostic Input Clamp Voltage IIN=1mA Min Typ 0.9 Max 2.5 100 3 1 150 125 31 36 9 20 10 Unit V A mA ms C C V
(*) The V IH is internally clamped at 6V about. It is possible to connect this pin to a higher voltage via an external resistor calculated to not exceed 10mA at the input pin. (*) Status determination > 100s after the switching edge.
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FUNCTIONAL DESCRIPTIO N The VN220 provides protection against a short circuit on the output and senses the output current to detect an open load. When one of these two faults is detected the diagnostic output is taken low. OPEN LOAD DETECTIO N When the device is first turned on, only the auxiliary DMOS device is turned on. If the load current remains below 9mA (typical), the open load signal is active and the diagnostic output is low. When the load current goes above 9 mA the open load detection becomes inactive and the diagnostic goes high. When the load current exceeds 300 mA, the main DMOS (50 m) turns on. When the load current drops below 240 mA, the main DMOS is turned off but no open load signal is generated and the auxiliary DMOS is still turned on. If the load current drops below 9mA, again the open load signal is generated and the diagnostic output goes low. SHORT CIRCUIT PROTECTION Short circuit protection is achieved using the fast response of the thermal shut-down circuit. The only current limitation in this condition is the saturation current of the DMOS devices and the external wiring resistance. Under this condition the device can survive a short circuit up to 30V across DMOS devices. THERMAL PROTECTION The device is internally protected against over temperature by the thermal protection circuit. When the device junction temperature exceeds the protection limit, the output is latched off. To turn on the output again, the input signal must be taken low to reset the latch, then high again to turn on the output. If the junction temperature has not yet cooled below the lower limit set by the thermal sensing hysteresis, the device will remain latched off.
NOTE: When an open load defect appears (or disappears) the state of the diagnostic output changes only after the filtering time (tol). See open load waveform diagrams.
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TRUTH TABLE
Normal Operation Open Circuit (No Load) Overtemperature
(**) With filter ing operation
INPUT L H H H
OUTPUT L H H L
DIAGNOSTIC H H L (**) L
FIGURE 1: Waveforms
NORMAL OPERATION
Input Load Current Stat. Stat. Switch On Off On Switch Off Input Load Current Tj
TTSD TR
THERMAL SHUTDOWN
OPEN LOAD
Input Load Current Stat. Switch On Off
t < tol t ol tol tol t < tol tol
FIGURE 2: Over Current Test Circuit
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FIGURE 3: Typical Application Circuit with a Schottky Diode for Reverse Supply Protection
FIGURE 4: Typical Application Circuit with Separate Signal Ground
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PENTAWATT (vertical) MECHANICAL DATA
DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Diam. 3.65 2.6 15.1 6 4.5 4 3.85 0.144 10.05 17.85 15.75 21.4 22.5 3 15.8 6.6 0.102 0.594 0.236 0.177 0.157 0.152 2.4 1.2 0.35 0.8 1 3.2 6.6 3.4 6.8 mm. MIN. TYP MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 0.396 0.703 0.620 0.843 0.886 0.118 0.622 0.260 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409
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PENTAWATT HV 011Y (horizontal) MECHANICAL DATA
DIM. A C D E F G1 G2 H1 H2 H3 L1 L2 L3 L5 L6 L7 R V2 V4 DIA 3.65 3.85 3.90 15.10 4.80 2.60 15.10 6.00 0.5 30 (typ) 90 (typ) 0.144 0.152 10.05 mm. MIN. 4.30 1.17 2.40 0.35 0.60 4.91 7.49 9.30 TYP MAX. 4.80 1.37 2.80 0.55 0.80 5.21 7.80 9.70 10.40 10.40 4.50 16.10 5.40 3.00 15.80 6.60 0.154 0.594 0.189 0.102 0.594 0.236 0.396 MIN. 0.169 0.046 0.094 0.014 0.024 0.193 0.295 0.366 inch TYP. MAX. 0.189 0.054 0.11 0.022 0.031 0.205 0.307 0.382 0.409 0.409 0.177 0.634 0.213 0.118 0.622 0.26
P023H1
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VN220 / VN220(011Y) / VN220(012Y)
PENTAWATT HV 012Y (in line) MECHANICAL DATA
DIM. A A1 b b1 c c1 D D1 e e1 E L L1 P S mm. MIN. 4.3 2.5 0.6 0.75 0.35 1.22 9 15.2 2.44 3.71 10 22.32 25.1 3.65 2.55 TYP MAX. 4.8 3.1 0.8 0.9 0.55 1.42 9.35 15.8 2.64 3.91 10.4 22.92 25.7 3.95 3.05 MIN. 0.169 0.098 0.024 0.03 0.014 0.048 0.354 0.598 0.096 0.146 0.394 0.879 0.988 0.144 0.1 inch TYP. MAX. 0.189 0.122 0.031 0.035 0.022 0.056 0.368 0.622 0.104 0.154 0.409 0.902 1.012 0.156 0.12
E P S
A c1
D1 D L L1
b1
e e1
b A1
c
P010P
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com
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